Part Number Hot Search : 
51216 FS100 B3020 ARF475LF NDUCTOR NCP133 ML65T541 RD100
Product Description
Full Text Search
 

To Download MT4S04A07 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 MT4S04A
Preliminary
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S04A
VHF~UHF Band Low Noise Amplifier Applications
* * Low noise figure: NF = 1.2dB (f = 1 GHz) High gain: Gain = 13.5dB (f = 1 GHz) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 10 5 2 40 10 150 125 -55~125 Unit V V V mA mA mW C C
Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-3J1C operating temperature/current/voltage, etc.) are within the Weight: 0.012 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Microwave Characteristics (Ta = 25C)
Characteristics Transition frequency Symbol fT (1) fT (2) S21e (1) S21e (2) NF (1) NF (2)
2 2
Test Condition VCE = 1 V, IC = 5 mA VCE = 3 V, IC = 7 mA VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 3 V, IC = 20 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz
Min 2 5 8 11.5
Typ. 4.5 7 10 13.5 1.3 1.2
Max 2.2 2
Unit GHz
Insertion gain
dB
Noise figure
dB
1
2007-11-01
MT4S04A
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Symbol ICBO IEBO hFE Cre Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz (Note) Min 80 Typ. 0.75 Max 0.1 1 160 1.1 pF Unit A A
Note: Cre is measured by 3 terminal method with capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Please handle with caution.
2
2007-11-01
MT4S04A
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
3
2007-11-01


▲Up To Search▲   

 
Price & Availability of MT4S04A07

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X